參數(shù)資料
型號(hào): BLV910
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 功率晶體管
英文描述: UHF power transistor(UHF 功率晶體管)
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-171, 6 PIN
文件頁(yè)數(shù): 5/12頁(yè)
文件大?。?/td> 95K
代理商: BLV910
1995 Apr 11
5
Philips Semiconductors
Product specification
UHF power transistor
BLV910
APPLICATION INFORMATION
RF performance at T
h
= 25
°
C in a common emitter, class-AB test circuit.
Ruggedness in class-AB operation
The BLV910 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases at rated
output power, under the following conditions: V
CE
= 26 V; f = 960 MHz; I
CQ
= 25 mA; T
mb
= 25
°
C.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
I
CQ
(mA)
P
L
(W)
G
p
(dB)
11
η
C
(%)
55
CW, class-AB
960
26
25
10
Fig.6
Power gain and efficiency as functions of
load power; typical values.
V
CE
= 26 V.
I
CQ
= 25 mA.
f = 960 MHz.
handbook, halfpage
Gp
(dB)
0
4
8
16
0
MLC662
12
8
PL
80
40
60
20
0
4
12
η
(%)
η
Gp
V
CE
= 26 V.
I
CQ
= 25 mA.
f = 960 MHz.
Fig.7
Load power as a function of input power;
typical values.
handbook, halfpage
PL
(W)
0
0.4
0.8
1.6
1.2
12
4
0
8
MLC663
Pi
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