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參數(shù)資料
| 型號： | BLV80-28 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.500 INCH, FM-4 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 26K |
| 代理商： | BLV80-28 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 20 mA
BV
CEO
I
C
= 200 mA
BV
EBO
I
E
= 10 mA
I
CBO
V
CB
= 30 V
h
FE
V
CE
= 25 V I
C
= 3.5 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
65
UNITS
V
V
V
mA
---
35
4.0
1.5
15
100
C
OB
V
CB
= 30 V
f = 1.0 MHz
150
pF
P
G
η
C
V
CC
= 25 V
P
OUT
= 80 W f = 175 MHz
6.5
65
7.0
dB
%
NPN SILICON RF POWER TRANSISTOR
BLV80-28
PACKAGE STYLE .500 4L FLG
ORDER CODE: ASI10797
DESCRIPTION:
The
BLV80-28
is Designed for
28 Volt
Class C VHF Power
AmplifierApplications up to 175 MHz
.
FEATURES:
η
C
= 65 % min. at 80 W/175 MHz
P
G
= 6.5 dB min. at 80 W/175 MHz
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
9.0 A
V
CBO
65 V
V
CEO
35 V
P
DISS
117 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
1.5
O
C/W
T
J
T
STG
θ
JC
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