參數(shù)資料
型號： BLV59
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF linear power transistor
中文描述： UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝： CERAMIC, SOT-171A, 6 PIN
文件頁數(shù)： 8/12頁
文件大?。?/td> 104K
代理商： BLV59
1998 Jan 09
8
Philips Semiconductors
Product specification
UHF linear power transistor
BLV59
Fig.8
Load power as a function of source power;
typical values.
handbook, halfpage
PL
(W)
0
10
0
10
MGP385
20
30
40
2
4
6
8
PS (W)
V
CE
= 25 V; f = 860 MHz; I
= 60 mA; T
h
= 25
°
C;
R
th mb-h
= 0.4 K/W; class-AB operation.
Fig.9
Power gain and efficiency as a function of
load power; typical values.
handbook, halfpage
0
50
0
MGP386
5
100
0
50
25
Gp
(dB)
Gp
PL (W)
η
C
(%)
η
C
V
CE
= 25 V; f = 860 MHz; I
= 60 mA; T
h
= 25
°
C;
R
th mb-h
= 0.4 K/W; class-AB operation.
Fig.10 Input impedance as a function of frequency
(series components); typical values.
V
CE
= 25 V; P
= 30 W; T
= 25
°
C;
R
th mb-h
= 0.4 K/W; I
C(ZS)
= 60 mA; class-AB operation.
handbook, halfpage
Zi
(
)
400
1.4
1.8
1
0.6
500
900
MGP387
600
700
800
f (MHz)
xi
ri
Fig.11 Load impedance as a function of frequency
(series components); typical values.
V
CE
= 25 V; P
= 30 W; T
= 25
°
C;
R
th mb-h
= 0.4 K/W; I
C(ZS)
= 60 mA; class-AB operation.
handbook, halfpage
ZL
(
)
400
2
3
1
0
500
900
MGP388
600
700
800f (MHz)
RL
XL
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