參數(shù)資料
型號： BLV59
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF linear power transistor
中文描述： UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝： CERAMIC, SOT-171A, 6 PIN
文件頁數(shù)： 5/12頁
文件大小： 104K
代理商： BLV59
1998 Jan 09
5
Philips Semiconductors
Product specification
UHF linear power transistor
BLV59
APPLICATION INFORMATION
RF performance up to T
h
= 25
°
C in a common emitter class-AB circuit; R
th mb-h
= 0.4 K/W.
Note
1.
Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with
30% sync input/25% sync output compression in television service (negative modulation, C.C.I.R. system).
Ruggedness in class-AB operation
The BLV59 is capable of withstanding a load mismatch corresponding to VSWR = 10 through all phases at rated load
power under the following conditions: V
CE
= 25 V; f = 860 MHz; T
h
= 25
°
C; R
th mb-h
= 0.4 K/W; I
C(ZS)
= 60 mA.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
I
C(ZS)
(mA)
G
p
(dB)
>
7
typ. 8.5
P
L
(W)
η
C
(%)
>
50
typ. 55
G
p
(dB)
(1)
<
1
typ. 0.2
CW, class-AB
860
25
60
30
handbook, full pagewidth
MGP383
50
50
D.U.T.
+
VBB
+
VCC
C3
L1
L2
L3
L4
L6
L11
L10
L9
C18
L5
L7
C4
C6
C8
C9
C19
L8
R1
C5
C2
C7
C10
C12
C1
C14
C16
C11
C20
C21
C13
C15
C17
Fig.6 Class-AB test circuit at 860 MHz.
Temperature compensated bias (R
i
<
0.1
).
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