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參數(shù)資料
| 型號(hào)： | BLV59 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF linear power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-171A, 6 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 104K |
| 代理商： | BLV59 |
1998 Jan 09
2
Philips Semiconductors
Product specification
UHF linear power transistor
BLV59
FEATURES
Internal input matching to achieve an optimum
wideband capability and high power gain
Emitter-ballasting resistors for lower junction
temperatures
Titanium-platinum-gold metallization ensures long life
and excellent reliability.
APPLICATIONS
UHF linear amplifiers in television transmitters.
DESCRIPTION
NPN silicon planar epitaxial power transistor encapsulated
in a 6-lead SOT171A flange package with a ceramic cap.
All leads are isolated from the flange.
PINNING - SOT171A
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
6
e
e
b
c
e
e
emitter
emitter
base
collector
emitter
emitter
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM141
Top view
e
c
b
1
2
3
4
5
6
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common emitter class-AB circuit.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
>
7
η
C
(%)
>
50
CW, class-AB
860
25
30
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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