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參數(shù)資料
| 型號(hào)： | BLV2046 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 128K |
| 代理商： | BLV2046 |
1997 Aug 22
3
Philips Semiconductors
Product specification
UHF power transistor
BLV2046
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Die only.
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
operating junction temperature
open emitter
open base
open collector
60
27
2.5
12
12
195
+150
200
V
V
V
A
A
W
°
C
°
C
T
mb
= 25
°
C
SYMBOL
PARAMETER
CONDITIONS
P
dis
= 195 W; T
mb
= 25
°
C
MAX.
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting-base
thermal resistance from mounting-base to heatsink
0.9
0.2
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
60
MAX. UNIT
4
100
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
C
c
collector-base breakdown voltage
collector-emitter breakdown voltage I
C
= 60 mA; open base
emitter-base breakdown voltage
collector-base leakage current
DC current gain
collector capacitance
I
C
= 20 mA; open emitter
65
27
V
V
V
mA
I
E
= 20 mA; I
B
= 30 mA; open collector 3.2
V
CB
= 40 V; I
E
= 0
V
CE
= 5 V; I
C
= 1 A
V
CB
= 26 V; I
E
= i
e
= 0; f = 1 MHz;
note 1
V
CE
= 26 V; I
C
= 0; f = 1 MHz
20
pF
C
re
feedback capacitance
40
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BLV20 | VHF power transistor |
| BLV2040 | TRANSISTOR | BJT | NPN | 28V V(BR)CEO | 300MA I(C) | SOT-409B |
| BLV2347 | TRANSISTOR | BJT | NPN | 27V V(BR)CEO | 10A I(C) | SOT-486A |
| BLV36 | TRANSISTOR | BJT | NPN | 33V V(BR)CEO | 8.5A I(C) | SOT-161 |
| BLV37 | TRANSISTOR | BJT | NPN | 36V V(BR)CEO | 10A I(C) | SOT-179VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLV2047 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLV21 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLV2347 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 27V V(BR)CEO | 10A I(C) | SOT-486A |
| BLV25 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLV297 | 制造商:BELLING 制造商全稱:SHANGHAI BELLING CO., LTD. 功能描述:N-channel Enhancement Mode Power MOSFET |
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