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參數(shù)資料
| 型號(hào)： | BLV2046 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 128K |
| 代理商： | BLV2046 |
1997 Aug 22
2
Philips Semiconductors
Product specification
UHF power transistor
BLV2046
FEATURES
Emitter ballasting resistors for optimum temperature
profile
Gold metallization ensures excellent reliability
Internal input and output matching to achieve high
power gain and collector efficiency for an easy design of
wideband circuits.
APPLICATIONS
Common emitter class-AB operation in PCN and PCS
applications in the 1800 to 1990 MHz frequency range.
DESCRIPTION
NPN silicon planar transistor in a 2-lead SOT460A flange
package with a ceramic cap. The emitter is connected to
the flange.
PINNING - SOT460A
PIN
SYMBOL
DESCRIPTION
2
3
c
b
e
collector
base
emitter, connected to flange
Fig.1 Simplified outline.
handbook, halfpage
MBK093
Top view
2
3
1
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common emitter test circuit
MODE OF
OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
≥
7.5
typ. 8
η
C
(%)
≥
40
typ. 33
d
im
(dBc)
typ.
30
CW, class-AB
2-tone, class-AB
1990
26
26
50
f
1
= 1990.0; f
2
= 1990.1
50 (PEP)
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location
of the user. It must never be thrown out with the general or domestic waste.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BLV20 | VHF power transistor |
| BLV2040 | TRANSISTOR | BJT | NPN | 28V V(BR)CEO | 300MA I(C) | SOT-409B |
| BLV2347 | TRANSISTOR | BJT | NPN | 27V V(BR)CEO | 10A I(C) | SOT-486A |
| BLV36 | TRANSISTOR | BJT | NPN | 33V V(BR)CEO | 8.5A I(C) | SOT-161 |
| BLV37 | TRANSISTOR | BJT | NPN | 36V V(BR)CEO | 10A I(C) | SOT-179VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLV2047 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLV21 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLV2347 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 27V V(BR)CEO | 10A I(C) | SOT-486A |
| BLV25 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLV297 | 制造商:BELLING 制造商全稱:SHANGHAI BELLING CO., LTD. 功能描述:N-channel Enhancement Mode Power MOSFET |
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