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參數(shù)資料
| 型號： | BLV2045N |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 75K |
| 代理商： | BLV2045N |
2000 Feb 21
6
Philips Semiconductors
Preliminary specification
UHF power transistor
BLV2045N
List of components (see Figs
5
and
6
)
Notes
1.
2.
3.
American Technical Ceramics type 100A or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
The striplines are on a double copper-clad printed-circuit board:
ε
r
= 6.15; thickness 0.64mm.
COMPONENT
C1
C2, C7
C3
C4
C5
C6
C8, C14
C9, C10, C11,
C15, C16
C12, C13
L1
L2
L3
L4
L5
L6
DESCRIPTION
VALUE
DIMENSIONS
Tekelec variable capacitor; type AT37281
multilayer ceramic chip capacitor; note1
multilayer ceramic chip capacitor; note 2
multilayer ceramic chip capacitor; note 2
Tekelec variable capacitor; type AT37271
multilayer ceramic chip capacitor; note 2
tantalum SMD capacitor
multilayer ceramic chip capacitor
0.4 to 2.5 pF
30 pF
2.4 pF
1.8 pF
0.6 to 4.5 pF
1.3 pF
35 V; 10
μ
F
100 nF
multilayer ceramic chip capacitor; note 2
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
5 turns enamelled 1 mm copper wire
20 pF
50
20.5
29.8
11
13.2
8 x 1 mm
2.5 x 3.5 mm
5.6 x 2.1 mm
2.0 x 7.4 mm
7.2 x 6.0 mm
int. dia. = 3.3 mm;
length = 6 mm
L7
L8
L9
L10
L11
L12
EMI filter; type NFM61RH20T332
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
2 turns enamelled 1 mm copper wire
3300 pF
11.5
6.9
35.8
14.4
6.6 x 7.1 mm
6.4 x 12.6 mm
9.9 x 1.6 mm
2.7 x 5.4 mm
int. dia. = 3.3 mm;
length = 2.5 mm
L13
R1
EMI filter; type NFM60RH20T152
chip resistor
1500 pF
2.2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLV2046 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLV2047 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLV21 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLV2347 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 27V V(BR)CEO | 10A I(C) | SOT-486A |
| BLV25 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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