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參數(shù)資料
| 型號： | BLV2045N |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 75K |
| 代理商： | BLV2045N |
2000 Feb 21
2
Philips Semiconductors
Preliminary specification
UHF power transistor
BLV2045N
FEATURES
Emitter ballasting resistors for optimum temperature
profile
Gold metallization ensures excellent reliability
Internal input and output matching for an easy design of
wideband circuits.
APPLICATIONS
Common emitter class-AB operation in PCN and PCS
applications in the 1800 to 2000 MHz frequency range.
DESCRIPTION
NPN silicon planar UHF power transistor in a 2-lead
SOT390A flange package with a ceramic cap. The emitter
is connected to the flange.
PINNING - SOT390A
PIN
SYMBOL
DESCRIPTION
1
2
3
c
b
e
collector
base
emitter, connected to flange
handbook, halfpage
MSA470
1
2
3
Top view
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common emitter test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
MODE OF
OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
η
C
(%)
d
im
(dBc)
≤
30
CW, class-AB
2-tone, class-AB
1990
26
26
35
typ. 9.5
≥
9.5
typ. 43
≥
33
f
1
= 1990.0; f
2
= 1990.1
35 (PEP)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
operating junction temperature
open emitter
open base
open collector
65
65
27
3
4
4
125
+150
200
V
V
V
A
A
W
°
C
°
C
T
mb
= 25
°
C
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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PDF描述 |
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| BLV2046 | UHF power transistor |
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| BLV2040 | TRANSISTOR | BJT | NPN | 28V V(BR)CEO | 300MA I(C) | SOT-409B |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BLV2046 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLV2047 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLV21 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLV2347 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 27V V(BR)CEO | 10A I(C) | SOT-486A |
| BLV25 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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