- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369473 > BLV2045 (NXP SEMICONDUCTORS) UHF power transistor(UHF功率晶體管) PDF資料下載
參數(shù)資料
| 型號： | BLV2045 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor(UHF功率晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-390A, 3 PIN |
| 文件頁數(shù)： | 5/16頁 |
| 文件大小： | 105K |
| 代理商： | BLV2045 |
1996 Nov 13
5
Philips Semiconductors
Product specification
UHF power transistor
BLV2045
APPLICATION INFORMATION
RF performance at T
h
= 25
°
C in a common emitter test circuit.
Note
1.
See application note BLV2045.
Ruggedness in class-AB operation
The BLV2045 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the
following conditions: f = 1950 MHz; V
CE
= 26 V; I
CQ
= 80 mA; P
L
= 30 W; T
mb
= 25
°
C.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
I
CQ
(mA)
P
L
(W)
G
p
(dB)
≥
8
typ. 8.5
≥
8
typ. 9
η
C
(%)
≥
40
typ. 45
≥
40
typ. 35
d
im
(dBc)
CW, class-AB
1950
26
80
30
CW, class-AB (note 1)
2-tone, class-AB
1990
26
26
80
80
30
f
1
= 1950; f
2
= 1950.1
30 (PEP)
typ.
30
Fig.6
Power gain and collector efficiency as
functions of load power; typical values.
V
CE
= 26 V; I
CQ
= 80 mA; f = 1950 MHz.
handbook, halfpage
0
8
4
0
10
20
40
MGD249
30
Gp
(dB)
PL (W)
η
C
(%)
η
C
20
40
0
60
Gp
Fig.7
Load power as a function of drive power;
typical values.
V
CE
= 26 V; I
CQ
= 80 mA; f = 1950 MHz.
handbook, halfpage
PL
(W)
0
2
4
6
30
10
0
20
MGD250
PD (W)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BLV2047 | UHF power transistor(UHF 功率晶體管) |
| BLV21 | UHF power transistor |
| BLV25 | VHF power transistor(VHF功率晶體管) |
| BLV33F | VHF linear power transistor(VHF線性功率晶體管) |
| BLV33 | VHF linear power transistor(VHF線性功率晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLV2045N | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLV2046 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLV2047 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLV21 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLV2347 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 27V V(BR)CEO | 10A I(C) | SOT-486A |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。