參數(shù)資料
型號: BLV2045
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power transistor(UHF功率晶體管)
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-390A, 3 PIN
文件頁數(shù): 3/16頁
文件大小: 105K
代理商: BLV2045
1996 Nov 13
3
Philips Semiconductors
Product specification
UHF power transistor
BLV2045
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
operating junction temperature
open emitter
open base
open collector
65
60
28
2.5
7
7
100
+150
200
V
V
V
A
A
W
°
C
°
C
T
mb
= 25
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-mb
thermal resistance from junction to
mounting base
thermal resistance from mounting base
to heatsink
P
tot
= 100 W; T
mb
= 25
°
C
1.75
K/W
R
th mb-h
0.4
K/W
Fig.2 DC SOAR.
handbook, halfpage
10
1
1
MGG292
1
10
10
2
IC
(A)
VCE (V)
(2)
(1)
(1) T
mb
= 25
°
C.
(2) T
h
= 70
°
C.
Fig.3 Power derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
Ptot
(W)
0
40
160
120
80
0
40
80
120
MGG293
Th (
°
C)
(1)
(2)
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