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參數(shù)資料
| 型號(hào)： | BLV2042 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 6/16頁(yè) |
| 文件大?。?/td> | 109K |
| 代理商： | BLV2042 |
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2000 May 08
6
Philips Semiconductors
Product specification
UHF power transistor
BLV2042
Fig.8
Power gain and collector efficiency as
functions of peak envelope load power;
typical values.
V
CE
= 26 V; I
CQ
= 15 mA; f
1
= 1950 MHz; f
2
= 1950.1 MHz.
handbook, halfpage
Gp
(dB)
0
1
5
80
60
40
20
0
12
4
0
8
2
3
4
MGD950
Gp
η
C
(%)
η
C
PL (PEP) (W)
Fig.9
Peak envelope load power as a function of
peak envelope drive power; typical values.
V
CE
= 26 V; I
CQ
= 15 mA; f
1
= 1950 MHz; f
2
= 1950.1 MHz.
handbook, halfpage
0
4
PL
(PEP)
(W)
PD (PEP) (W)
0
2
0.05
0.1
0.2
0.15
MGL163
Fig.10 Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
V
CE
= 26 V; f
1
= 1950 MHz; f
2
= 1950.1 MHz.
(1) I
CQ
= 15 mA.
(2) I
CQ
= 40 mA.
(3) I
CQ
= 60 mA.
handbook, halfpage
0
30
40
50
1
5
2
3
4
MGD951
d3
(dBc)
PL (PEP) (W)
(3)
(2)
(1)
Fig.11 Intermodulation distortion as a function of
peak envelope load power; typical values.
V
CE
= 26 V; I
CQ
= 15 mA; f
1
= 1950 MHz; f
2
= 1950.1 MHz.
handbook, halfpage
dim
(dBc)
0
1
5
30
50
60
40
2
3
4
MGD952
PL (PEP) (W)
d5
d3
d7
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| BLV2044 | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:UHF power transistor |
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| BLV2045N | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:UHF power transistor |
| BLV2046 | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:UHF power transistor |
| BLV2047 | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:UHF power transistor |
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