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參數(shù)資料
| 型號： | BLV2042 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 4/16頁 |
| 文件大小： | 109K |
| 代理商： | BLV2042 |
2000 May 08
4
Philips Semiconductors
Product specification
UHF power transistor
BLV2042
THERMAL CHARACTERISTICS
Note
1.
Transistor with metallized ground plane mounted on a printed-circuit board, see “Mounting and soldering
recommendations in the General part of the associated handbook”
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-mb
thermal resistance from junction to
mounting base
P
tot
= 14.6 W; T
mb
= 25
°
C; note 1
12
K/W
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
6
2.5
MAX.
1.3
120
UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
open emitter; I
C
= 5 mA
open base; I
C
= 10 mA
open collector; I
E
= 0.5 mA
V
CE
= 26 V; V
BE
= 0
V
CE
= 26 V; I
C
= 600 mA
V
CB
= 26 V; I
E
= i
e
= 0; f = 1 MHz
V
CE
= 26 V; I
C
= 0; f = 1 MHz
60
28
4
30
V
V
V
mA
pF
pF
Fig.4
DC current gain as a function of collector
current; typical values.
(1) V
CE
= 26 V; t
p
= 500
μ
s;
δ
= < 1 %.
(2) V
CE
= 10 V.
handbook, halfpage
0
80
40
hFE
IC (A)
0
(1)
(2)
0.4
0.8
1.6
1.2
MGD936
Fig.5
Capacitance as a function of
collector-emitter voltage; typical values.
f = 1 MHz.
handbook, halfpage
C
(pF)
0
50
0
10
20
30
40
VCE (V)
10
20
30
40
MGD947
Cc
Cre
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