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參數(shù)資料
| 型號(hào)： | BLV2042 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 5/16頁(yè) |
| 文件大?。?/td> | 109K |
| 代理商： | BLV2042 |
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2000 May 08
5
Philips Semiconductors
Product specification
UHF power transistor
BLV2042
APPLICATION INFORMATION
RF performance at T
mb
= 25
°
C in a common emitter test circuit.
Ruggedness in class-AB operation
The BLV2042 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases under the
following conditions: f = 1950 MHz; V
CE
= 26 V; I
CQ
= 15 mA; P
L
= 4 W; T
mb
= 25
°
C.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
I
CQ
(mA)
P
L
(W)
G
p
(dB)
≥
11
typ. 13
≥
11
typ. 14
η
C
(%)
≥
40
typ. 43
≥
40
typ. 35
d
im
(dBc)
CW, class-AB
1950
26
15
4
CW, class-AB
2-tone, class-AB
1990
26
26
15
15
4
f
1
= 1950; f
2
= 1950.1
4 (PEP)
typ.
30
handbook, halfpage
Gp
(dB)
0
1
5
PL (W)
η
C
(%)
12
4
0
8
80
60
20
0
40
2
3
4
MGU190
η
C
Gp
Fig.6
Power gain and collector efficiency as
functions of load power; typical values.
CW, class-AB; V
CE
= 26 V; I
CQ
= 15 mA; f = 1950 MHz;
T
mb
= 25
°
C.
handbook, halfpage
0
4
2
0
0.1
0.2
0.4
PD (W)
PL
(W)
0.3
MGU191
Fig.7
Load power as a function of drive power;
typical values.
CW, class-AB; V
CE
= 26 V; I
CQ
= 15 mA; f = 1950 MHz;
T
mb
= 25
°
C.
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| BLV2045N | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
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