參數(shù)資料
型號(hào): BLV194
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power transistor
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-171A, 6 PIN
文件頁(yè)數(shù): 8/11頁(yè)
文件大?。?/td> 91K
代理商: BLV194
January 1993
8
Philips Semiconductors
Product specification
UHF power transistor
BLV194
Fig.9 Component layout for 900 MHz class-AB test circuit.
The components are mounted on one side of a copper-clad PTFE fibre-glass board; the other side is unetched
and serves as a ground plane. Earth connections from the component side to the ground plane are made by
fixing screws and copper straps under the emitter leads.
ndbook, full pagewidth
MEA984
C3
C5
C14
C16
+
VBB
+
VCC
C21
C20
C1
C2
C4
L1
L2
C6
C7
L3
C10
L7
L4
C9
L5
R1
L6
C8
L8
C11
C12
L10
C13
L12
C15
C17
R2
L9
C19
C18
L11
handbook, full pagewidth
MEA983
strap
strap
strap
strap
rivets
(12x)
mounting
screws
(8x)
126 mm
70 mm
相關(guān)PDF資料
PDF描述
BRY39 Programmable unijunction transistor/ Silicon controlled switch
BSN254 N-channel enhancement mode vertical D-MOS transistors
BSN254A N-channel enhancement mode vertical D-MOS transistors
BST70 N-channel vertical D-MOS transistor
BTA204W-500B PTSE 16C 16#16 SKT RECP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLV1N60 制造商:ESTEK 制造商全稱:ESTEK 功能描述:N-channel Enhancement Mode Power MOSFET
BLV1N60A 制造商:ESTEK 制造商全稱:ESTEK 功能描述:N-channel Enhancement Mode Power MOSFET
BLV20 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray
BLV2040 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 28V V(BR)CEO | 300MA I(C) | SOT-409B
BLV2042 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor