參數(shù)資料
型號: BLV194
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power transistor
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-171A, 6 PIN
文件頁數(shù): 5/11頁
文件大?。?/td> 91K
代理商: BLV194
January 1993
5
Philips Semiconductors
Product specification
UHF power transistor
BLV194
APPLICATION INFORMATION
RF performance at T
h
= 25
°
C in a common emitter test circuit.
R
th j-mb
= 0.4 K/W.
MODE OF
OPERATION
f
(MHz)
V
CE
(V)
I
CQ
(mA)
P
L
(W)
G
P
(dB)
7
typ. 8.5
η
C
(%)
50
typ. 57
CW, class-AB
900
12.5
10
16
Fig.6
Power gain and efficiency as functions of
load power, typical values.
Class-AB operation: I
CQ
= 10 mA; V
CE
= 12.5 V;
f = 900 MHz.
handbook, halfpage
Gp
(dB)
MRC096
0
4
8
12
0
20
40
60
80
0
4
8
12
PL (W)
Gp
16
20
η
(%)
η
Ruggedness in class-AB operation
The BLV194 is capable of withstanding a load mismatch
corresponding to VSWR = 20:1 through all phases at
rated output power under the following conditions:
V
CE
= 15.5 V; T
h
= 25
°
C; R
th j-mb
= 0.4 K/W; f = 900 MHz.
Fig.7
Load power as a function of input power,
typical values.
Class-AB operation: I
CQ
= 10 mA; V
CE
= 12.5 V;
f = 900 MHz.
handbook, halfpage
(W)
MRC101
0
4
8
12
16
0
1
2
3
PIN (W)
4
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