參數(shù)資料
型號(hào): BLV193
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power transistor
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-171A, 6 PIN
文件頁(yè)數(shù): 12/14頁(yè)
文件大?。?/td> 108K
代理商: BLV193
March 1993
12
Philips Semiconductors
Product specification
UHF power transistor
BLV193
Fig.18 Input impedance (series components) as a
function of frequency, typical values.
Class-A operation; V
CE
= 12 V; I
C
= 1.3 A;
T
h
= 25
°
C.
handbook, halfpage
Zi
(
)
MRA547
0
1
2
3
4
840
880
xi
ri
920
960
f (MHz)
Fig.19 Load impedance (series components) as a
function of frequency, typical values.
Class-A operation; V
CE
= 12 V; I
C
= 1.3 A;
T
h
= 25
°
C.
handbook, halfpage
ZL
(
)
MRA549
0
1
2
3
4
840
880
RL
XL
920
960
f (MHz)
Fig.20 Definition of transistor impedance.
handbook, halfpage
MBA451
Zi
ZL
Fig.21 Power gain as a function of frequency,
typical values.
Class-A operation; V
CE
= 12 V; I
C
= 1.3 A;
T
h
= 25
°
C.
handbook, halfpage
Gp
(dB)
MRA557
0
840
4
8
12
880
920
960
f (MHz)
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