參數(shù)資料
型號(hào): BLV12
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: VHF power transistor
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-123A, 4 PIN
文件頁數(shù): 7/11頁
文件大?。?/td> 72K
代理商: BLV12
September 1991
7
Philips Semiconductors
Product specification
VHF power transistor
BLV12
List of components (see test circuit)
Notes
1.
2.
The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric, thickness
1
16
inch.
Taps for capacitors C3a and C3b are situated 5 mm from the transistor.
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1
C2, C8
C3a, C3b
C4
C5
C6a, C6b
C7
L1
film dielectric trimmer
film dielectric trimmer
500 V ceramic capacitor
500 V ceramic capacitor
polyester capacitor
500 V ceramic capacitor
film dielectric trimmer
1 turn enamelled 1.6 mm copper wire
2.5 to 20 pF
4 to 40 pF
47 pF
120 pF
100 nF
8.2 pF
5 to 60 pF
2222 809 07004
2222 809 07008
2222 809 07011
int. dia. 9 mm;
leads 2
×
5 mm
int. dia. 3 mm;
leads 2
×
5 mm
L2
7 turns closely wound enamelled 0.5 mm
copper wire
grade 3B Ferroxcube wideband HF choke
stripline (note 1)
100 nH
L3, L8
L4, L5
4312 020 36640
12 mm
×
6 mm;
note 2
int. dia. 5 mm;
length 6 mm;
leads 2
×
5 mm
int. dia. 4.5 mm;
length 6 mm;
leads 2
×
5 mm
L6
2 turns enamelled 1.6 mm copper wire
L7
2 turns enamelled 1.6 mm copper wire
R1
R2
0.25 W carbon resistor
0.25 W carbon resistor
10
, 5%
4.7
, 5%
Fig.8 Class-B test circuit at f = 175 MHz.
handbook, full pagewidth
MGP247
50
50
C1
L1
L2
L4
R2
L3
L8
L6
L7
L5
R1
C2
C3b
C3a
T.U.T.
C4
C5
+
VCC
C7
C6a
C8
C6b
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