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參數(shù)資料
| 型號(hào)： | BLV12 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-123A, 4 PIN |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 72K |
| 代理商： | BLV12 |
September 1991
6
Philips Semiconductors
Product specification
VHF power transistor
BLV12
APPLICATION INFORMATION
RF performance at T
mb
= 25
°
C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
P
(dB)
η
C
(%)
c.w. class-B
175
12.5
30
>
9
typ. 9.8
>
60
typ. 66
Fig.6
Gain and efficiency as functions of load
power, typical values.
Class-B operation; V
CE
= 12.5 V; f = 175 MHz.
handbook, halfpage
MRA367
0
4
8
12
10
30
50
70
10
20
30
40
L
(%)
η
(dB)
GP
η
Ruggedness in class-B operation
The BLV12 is capable of withstanding a full load mismatch
corresponding to VSWR = 50:1 through all phases at rated
output power, up to a supply voltage of 15.5 V, and
f = 175 MHz.
Fig.7
Load power as a function of drive power,
typical values.
Class-B operation; V
CE
= 12.5 V; f = 175 MHz.
handbook, halfpage
PL
MRA371
0
10
20
30
40
0
2
4
6
8
(W)
IN
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