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參數(shù)資料
| 型號(hào)： | BLV12 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-123A, 4 PIN |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | BLV12 |
September 1991
3
Philips Semiconductors
Product specification
VHF power transistor
BLV12
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
, I
C(AV)
I
CM
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
collector current
open emitter
open base
open collector
DC or average value
peak value
f
>
1 MHz
RF operation;
f
>
1 MHz;
T
mb
= 25
°
C
36
16
3
6
18
V
V
V
A
A
P
tot
total power dissipation
100
W
T
stg
T
j
storage temperature range
junction operating temperature
65
150
200
°
C
°
C
Fig.2 Power/temperature derating curve.
(I) Continuous DC operation.
(II) Short time operation during mismatch
(f
>
1 MHz)
handbook, halfpage
MRA372
0
20
40
60
80
100
0
20
40
60
80
100
120
I
II
(W)
Th
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-mb(RF)
from junction to mounting base
P
tot
= 100 W;
T
mb
= 25
°
C
1.75
K/W
R
th mb-h
from mounting base to heatsink
0.3
K/W
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