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參數(shù)資料
| 型號(hào)： | BLU60-12 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | UHF power transistor |
| 中文描述： | 超高頻大功率晶體管 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 59K |
| 代理商： | BLU60-12 |
March 1986
5
Philips Semiconductors
Product specification
UHF power transistor
BLU60/12
APPLICATION INFORMATION
R.F. performance at T
h
= 25
°
C in a common-emitter class-B circuit
List of components:
Notes
1.
2.
American Technical Ceramics capacitor type B or capacitor of the same quality.
Idem type A.
MODE OF OPERATION
V
CE
V
f
MHz
P
L
W
G
p
dB
>
4,4
typ. 5,5
η
C
%
>
55
typ. 62
narrow band; c.w.
12,5
470
60
C1 = C13 = 1,8 to 10 pF film dielectric trimmer (cat. no. 2222 809 05002)
C2 = C11 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001)
C3 = 12 pF multilayer ceramic chip capacitor
(1)
C4 = C5 = 8, 2 pF multilayer ceramic chip capacitor
(2)
C6 = C7 = 15 pF multilayer ceramic chip capacitor
(1)
C8 = 110 pF multilayer ceramic chip capacitor
(1)
C9 = 3
×
100 nF multilayer ceramic chip capacitor in parallel
C10 = 2,2
μ
F (35 V) electrolytic capacitor
C12 = 5,6 pF multilayer ceramic chip capacitor
(1)
L1 = 34,6
stripline (17 mm
×
4 mm)
L2 = L5 = 25,3 stripline (6 mm
×
6 mm)
L3 = 45 nH; 4 turns, closely wound enamelled Cu-wire (0,5 mm); int. dia. 2,5 mm; leads 2
×
5 mm
L4 = L8 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642)
L6 = 29,2
stripline (25,5 mm
×
5 mm)
L7 = 10 nH; 1 turn Cu-wire (1,0 mm); int. dia. 5 mm; leads 2
×
5 mm
R1 = 1
±
5% (0,4 W) metal film resistor
R2 = 10
±
5% (1,0 W) metal film resistor
handbook, full pagewidth
MDA338
D.U.T.
C6
C5
C1
C3
C4
C2
L5
L7
L8
L1
L2
R1
L4
L3
L6
C7
C8
50
50
C12
C13
C11
C10
+
VCC
R2
C9
Fig.5 Class-B test circuit at f = 470 MHz.
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