參數(shù)資料
型號(hào): BLU60-12
廠商: NXP Semiconductors N.V.
英文描述: UHF power transistor
中文描述: 超高頻大功率晶體管
文件頁數(shù): 2/10頁
文件大?。?/td> 59K
代理商: BLU60-12
March 1986
2
Philips Semiconductors
Product specification
UHF power transistor
BLU60/12
DESCRIPTION
N-P-N silicon planar epitaxial
transistor in SOT-119 envelope
primarily intended for use in mobile
radio transmitters in the 470 MHz
communications band.
FEATURES
multi-base structure and
emitter-ballasting resistors for an
optimum temperature profile.
internal matching to achieve an
optimum wideband capability and
high power gain.
gold metallization ensures
excellent reliability.
The transistor has a 6-lead flange
envelope with a ceramic cap. All
leads are isolated from the flange.
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
°
C in a common-emitter class-B circuit
MODE OF OPERATION
V
CE
V
f
MHz
P
L
W
G
p
dB
>
4,4
η
C
%
>
55
narrow band; c.w.
12,5
470
60
PIN CONFIGURATION
Fig.1 Simplified outline, SOT119A.
handbook, halfpage
2
4
6
5
3
1
MSB006
PINNING
PIN
DESCRIPTION
1
2
3
4
5
6
emitter
emitter
base
collector
emitter
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
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