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參數(shù)資料
| 型號： | BLU60-12 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | UHF power transistor |
| 中文描述： | 超高頻大功率晶體管 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 59K |
| 代理商： | BLU60-12 |
March 1986
4
Philips Semiconductors
Product specification
UHF power transistor
BLU60/12
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified
Collector-base breakdown voltage
open emitter; I
C
= 100 mA
Collector-emitter breakdown voltage
open base; I
C
= 200 mA
Emitter-base breakdown voltage
open collector; I
E
= 20 mA
Collector cut-off current
V
BE
= 0; V
CE
= 16 V
Second breakdown energy
L = 25 mH; f = 50 Hz; R
BE
= 10
D.C. current gain
V
(BR)CBO
min.
36 V
V
(BR)CEO
min.
16,5 V
V
(BR)EBO
min.
4 V
I
CES
max.
44 mA
E
SBR
min.
15 mJ
V
CE
= 10 V; I
C
= 8 A
h
FE
min.
typ.
15
60
Collector capacitance at f = 1 MHz
I
E
= i
e
= 0; V
CB
= 12,5 V
Feedback capacitance at f = 1 MHz
I
C
= 0; V
CE
= 12,5
Collector-flange capacitance
C
c
typ.
170 pF
C
re
C
cf
typ.
typ.
100 pF
3 pF
Fig.3
D.C. current gain versus collector current;
T
j
= 25
°
C.
handbook, halfpage
hFE
0
10
20
IC (A)
40
0
80
30
60
40
20
MDA336
VCE = 12.5 V
10 V
Fig.4
Output capacitance versus V
CB
; I
E
= i
e
= 0;
f = 1 MHz.
handbook, halfpage
Cc
(pF)
0
4
20
300
100
0
200
8
12
16
MDA337
VCB (V)
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