參數(shù)資料
型號: BLT52
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power transistor
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-409A, 8 PIN
文件頁數(shù): 6/12頁
文件大小: 93K
代理商: BLT52
1998 Jan 28
6
Philips Semiconductors
Product specification
UHF power transistor
BLT52
Fig.7
Power gain and collector efficiency as
functions of load power; typical values.
handbook, halfpage
(dB)
0
2
10
2
0
6
MBK251
4
10
8
6
Gp
η
C
(%)
70
80
40
30
4
50
20
60
8
PL (W)
η
C
CW, class-B operation; f = 470 MHz; V
CE
= 7.5 V;
tuned at P
L
= 7 W; T
mb
60
°
C.
Fig.8
Load power as a function of input power;
typical values.
CW, class-B operation; f = 470 MHz; V
CE
= 7.5 V;
tuned at P
L
= 7 W; T
mb
60
°
C.
handbook, halfpage
PL
(W)
0
0.5
1.0
1.5
2.0
8
4
2
0
6
MGD259
PIN (W)
Fig.9
Power gain as a function of frequency;
typical values.
CW, class-B operation; V
CE
= 7.5 V; P
L
= 7 W; T
mb
60
°
C.
handbook, halfpage
(dB)
100
150
8
4
12
0
16
MBK252
200
300
250
f (MHz)
Fig.10 Power gain as a function of frequency;
typical values.
CW, class-B operation; V
CE
= 7.5 V; P
L
= 7 W; T
mb
60
°
C.
handbook, halfpage
Gp
(dB)
400
420
4
8
0
12
MBK253
440
480
460
f (MHz)
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