參數(shù)資料
型號(hào): BLT52
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power transistor
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-409A, 8 PIN
文件頁數(shù): 5/12頁
文件大?。?/td> 93K
代理商: BLT52
1998 Jan 28
5
Philips Semiconductors
Product specification
UHF power transistor
BLT52
APPLICATION INFORMATION
RF performance at T
mb
60
°
C in a common emitter test circuit.
Ruggedness in class-B operation
The BLT52 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: CW, class-B operation; f = 470 MHz; V
CE
= 9 V and P
L
= 7 W; T
mb
60
°
C.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
8
typ. 9.5
8
typ. 9.5
η
C
(%)
50
typ. 65
50
typ. 55
CW, class-B
470
7.5
7
6
3
Fig.5
Power gain and collector efficiency as
functions of load power; typical values.
handbook, halfpage
Gp
(dB)
0
2
2
0
6
MBK250
4
8
6
Gp
η
C
(%)
100
20
4
40
0
60
8
80
PL (W)
η
C
CW, class-B operation; f = 470 MHz; V
CE
= 6 V;
tuned at P
L
= 3 W; T
mb
60
°
C.
Fig.6
Load power as a function of input power;
typical values.
CW, class-B operation; f = 470 MHz; V
CE
= 6 V;
tuned at P
L
= 3 W; T
mb
60
°
C.
handbook, halfpage
PL
(W)
0
1
2
3
8
4
2
0
6
MGD257
PIN (W)
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