參數(shù)資料
型號: BLT52
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power transistor
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-409A, 8 PIN
文件頁數(shù): 4/12頁
文件大?。?/td> 93K
代理商: BLT52
1998 Jan 28
4
Philips Semiconductors
Product specification
UHF power transistor
BLT52
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
24
17
MAX.
1
UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
open emitter; I
C
= 20 mA
open base; I
C
= 40 mA
open collector; I
E
= 4 mA
V
BE
= 0; V
CE
= 7.5 V
I
C
= 1.2 A; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 7.5 V; f = 1 MHz
I
C
= 0; V
CE
= 7.5 V; f = 1 MHz
20
10
3
25
V
V
V
mA
pF
pF
Fig.3
DC current gain as a function of collector
current; typical values.
V
CE
= 5 V; T
j
= 25
°
C.
Measured under pulse conditions: t
p
300
μ
s;
δ ≤
0.001.
handbook, halfpage
hFE
0
2.0
0
20
MGM486
40
60
80
0.4
0.8
1.2
1.6
IC (mA)
Fig.4
Collector capacitance as a function of
collector-base voltage; typical values.
I
E
= i
e
= 0; f = 1 MHz; T
j
= 25
°
C.
handbook, halfpage
(pF)
0
20
0
10
MGM487
20
30
40
4
8
12
16
VCB (V)
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