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參數(shù)資料
| 型號(hào)： | BLS3135-50 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Microwave power transistor(微波功率晶體管) |
| 中文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 62K |
| 代理商： | BLS3135-50 |
1999 Aug 16
3
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1.
Equivalent thermal impedance under pulsed microwave operating conditions. Measured with IR-scan with 20
μ
m
spotsize at hotspot.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
RF performance at T
h
= 25
°
C in a common-base test circuit.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CES
V
EBO
I
CM
P
tot
T
stg
T
j
T
sld
collector-base voltage
collector-emitter voltage
emitter-base voltage
peak collector current
total power dissipation
storage temperature
operating junction temperature
soldering temperature
open emitter
R
BE
= 0
open collector
t
p
≤
100
μ
s;
δ ≤
10%
t
p
= 100
μ
s;
δ
= 10%; T
mb
= 25
°
C
65
75
75
2
6
80
+200
200
235
V
V
V
A
W
°
C
°
C
°
C
up to 0.2 mm from ceramic cap;
t
≤
10 s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Z
th j-h
thermal impedance from junction to heatsink
t
p
= 100
μ
s;
δ
= 10%; note 1
t
p
= 300
μ
s;
δ
= 10%; note 1
0.71
0.99
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
1.5
3
0.3
UNIT
V
(BR)CBO
V
(BR)CES
I
CBO
I
CES
I
EBO
h
FE
collector-base breakdown voltage
collector-emitter breakdown voltage I
C
= 15 mA; V
BE
= 0
collector leakage current
collector leakage current
emitter leakage current
DC current gain
I
C
= 15 mA; open emitter
75
75
40
V
V
mA
mA
mA
V
CB
= 40 V; I
E
= 0
V
CE
= 40 V; V
BE
= 0
V
EB
= 1.5 V; I
C
= 0
V
CB
= 5 V; I
C
= 1.5 A
MODE OF OPERATION
f
(GHz)
V
CE
(V)
P
L
(W)
≥
50
typ. 55
G
p
(dB)
≥
7
typ. 8
η
C
(%)
≥
35
typ. 40
Class-C; t
p
= 100
μ
s;
δ
= 10%
3.1 to 3.5
40
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| BLS3135-50,114 | 功能描述:射頻雙極電源晶體管 BULKTR TNS-MICL RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLS3135-65 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Microwave power transistor |
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