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參數(shù)資料
| 型號(hào)： | BLF547 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SOT-262A2, 4 PIN |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 123K |
| 代理商： | BLF547 |
October 1992
6
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF547
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
h
= 25
°
C; R
th mb-h
= 0.15 K/W, unless otherwise specified.
RF performance in a common source, push-pull, class-B test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
I
DQ
(mA)
2
×
100
P
L
(W)
G
P
(dB)
>
10
typ. 12
η
D
(%)
>
50
typ. 55
CW, class-B
500
28
100
Ruggedness in class-B operation
The BLF547 is capable of withstanding a load mismatch
corresponding to VSWR = 10 through all phases under the
following conditions:
V
DS
= 28 V; f = 500 MHz at rated output power.
Fig.9
Power gain and efficiency as functions of
load power, typical values.
Class-B operation; V
DS
= 28 V; I
= 2
×
100 mA;
f = 500 MHz; Z
L
= 1.5
+
j1.8
(per section).
handbook, halfpage
(dB)
0
5
10
15
20
0
20
PL (W)
40
60
80
100
η
(%)
20
60
100
140
η
MRB021
GP
Fig.10 Load power as a function of input power,
typical values.
Class-B operation; V
DS
= 28 V; I
= 2
×
100 mA;
f = 500 MHz; Z
L
= 1.5
+
j1.8
(per section).
handbook, halfpage
PL
(W)
0
40
80
120
0
4
8
12
16
20
PIN (W)
MRB028
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