參數(shù)資料
型號(hào): BLF6G20-180P
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power LDMOS transistor
中文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC, FM-2
文件頁(yè)數(shù): 1/8頁(yè)
文件大小: 49K
代理商: BLF6G20-180P
1.
Product profile
1.1 General description
180 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz
1.2 Features
I
Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a
supply voltage of 32 V and an I
Dq
of 1600 mA:
N
Average output power = 50 W
N
Power gain = 17.5 dB (typ)
N
Efficiency = 27.5 %
N
ACPR =
35 dBc
I
Easy power control
I
Integrated ESD protection
I
Excellent ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation (1800 MHz to 2000 MHz)
I
Internally matched for ease of use
1.3 Applications
I
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1800 MHz to 2000 MHz frequency range.
BLF6G20-180P
UHF power LDMOS transistor
Rev. 01 — 19 April 2006
Objective data sheet
Table 1:
RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Mode of operation
f
(MHz)
2-carrier W-CDMA
1805 to 1880
Typical performance
V
DS
(V)
32
P
L(AV)
(W)
50
G
p
(dB)
17.5
η
D
(%)
27.5
ACPR
(dBc)
35
[1]
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
相關(guān)PDF資料
PDF描述
BLM31AF700SN1L FERRIT INDUKTIVITAET SMD IMPEDANZ 70OHM
BLM31AJ601SN1L FERRIT INDUKTIVITAET SMD IMPEDANZ 600OHM
BLM41AF151SN1L FERRIT INDUKTIVITAET SMD IMPEDANZ 150OHM
BLM41PF800SN1L FERRIT INDUKTIVITAET SMD IMPEDANZ 80OHM
BLM41PG600SN1L FERRIT INDUKTIVITAET SMD IMPEDANZ 60OHM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF6G20-180PN 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Power LDMOS transistor
BLF6G20-180PN,112 功能描述:射頻MOSFET電源晶體管 Trans MOSFET N-CH 65V 5-Pin RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF6G20-180RN 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Power LDMOS transistor
BLF6G20-180RN,112 功能描述:射頻MOSFET電源晶體管 TRANSISTOR PWR LDMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF6G20-230P 功能描述:IC BASESTATION FINAL SOT502A RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR