參數(shù)資料
型號: BLF547
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
中文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: SOT-262A2, 4 PIN
文件頁數(shù): 4/12頁
文件大?。?/td> 123K
代理商: BLF547
October 1992
4
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF547
CHARACTERISTICS (per section)
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
2.1
0.4
13
77
62
18
MAX.
2.5
1
4
0.5
85
70
21
UNIT
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
V
GS
= 0; I
D
= 25 mA
V
GS
= 0; V
DS
= 28 V
±
V
GS
= 20 V; V
DS
= 0
I
D
= 100 mA; V
DS
= 10 V
I
D
= 3 A; V
DS
= 10 V
I
D
= 3 A; V
GS
= 10 V
V
GS
= 15 V; V
DS
= 10 V
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
65
1
1.5
10
V
mA
μ
A
V
S
A
pF
pF
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values per section.
V
DS
= 10 V.
handbook, halfpage
TC
(mV/K)
MRB025
0
2
2
4
10
2
10
1
1
10
ID (A)
Fig.5
Drain current as a function of gate-source
voltage, typical values per section.
V
DS
= 10 V; T
j
= 25
°
C.
handbook, halfpage
MRB024
0
5
10
0
5
10
15
20
ID
(A)
VGS (V)
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