參數(shù)資料
型號: BLF4G10LS-120
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power LDMOS transistor
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC, LDMOST, 2 PIN
文件頁數(shù): 8/13頁
文件大?。?/td> 100K
代理商: BLF4G10LS-120
9397 750 14547
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
8 of 13
Philips Semiconductors
BLF4G10LS-120
UHF power LDMOS transistor
[1]
American Technical Ceramics type 100B or capacitor of same quality.
Table 8:
Component
C1, C4, C5, C6
List of components (see
Figure 9
and
Figure 10
)
Description
multilayer ceramic chip
capacitor
multilayer ceramic chip
capacitor
multilayer ceramic chip
capacitor
multilayer ceramic chip
capacitor
tantalum capacitor
Philips electrolytic
capacitor
Philips chip resistor
Value
Dimensions
Catalogue number
[1]
68 pF
C2
[1]
5.1 pF
C3
[1]
3.0 pF
C7
1
μ
F
1812X7R105KL2AB
C8, C9
C10
10
μ
F; 35 V
220
μ
F
R1
5.1
0603
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BLF4G10LS-120,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G10LS-160 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G10LS-160,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G10S-120 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor
BLF4G20-110 制造商:NXP Semiconductors 功能描述:MOSFET Transistor, N-Channel, SOT-502A