參數(shù)資料
型號(hào)： BLF4G10LS-120
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC, LDMOST, 2 PIN
文件頁數(shù)： 3/13頁
文件大小： 100K
代理商： BLF4G10LS-120
9397 750 14547
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
3 of 13
Philips Semiconductors
BLF4G10LS-120
UHF power LDMOS transistor
6.
Characteristics
7.
Application information
7.1 Ruggedness in class-AB operation
The BLF4G10LS-120 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 650 mA; P
L
= 120 W (CW); f = 960 MHz.
Table 6:
T
j
= 25
°
C unless otherwise specified.
Symbol
Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
gate-source threshold
voltage
V
GSq
gate-source quiescent
voltage
I
DSS
drain leakage current
I
DSX
drain cut-off current
Characteristics
Conditions
V
GS
= 0 V; I
D
= 0.9 mA
Min
65
Typ
-
Max
-
Unit
V
V
DS
= 10 V; I
D
= 180 mA
2.5
3.1
3.5
V
V
DS
= 28 V; I
D
= 900 mA
2.70
3.20
3.70
V
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 9 V;
V
DS
= 10 V
V
GS
= 15 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 10 A
-
27
-
30
2.5
-
μ
A
A
I
GSS
g
fs
gate leakage current
forward
transconductance
drain-source on-state
resistance
feedback capacitance
-
-
-
9.0
300
-
nA
S
R
DS(on)
V
GS
= V
GS(th)
+ 6 V;
I
D
= 6 A
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
-
90
-
m
C
rs
-
2.5
-
pF
Table 7:
Mode of operation: GSM EDGE; f = 920 MHz and 960 MHz; RF performance at V
DS
= 28 V;
I
Dq
= 650 mA; T
case
= 25
°
C; unless otherwise specified, in a class AB production test circuit.
Symbol
Parameter
G
p
power gain
IRL
input return loss
η
D
drain efficiency
ACPR
400
adjacent channel power ratio (400 kHz)
ACPR
600
adjacent channel power ratio (600 kHz)
EVM
rms
rms EDGE signal distortion error
EVM
M
peak EDGE signal distortion error
Application information
Conditions
P
L(AV)
= 48 W
P
L(AV)
= 48 W
P
L(AV)
= 48 W
P
L(AV)
= 48 W
P
L(AV)
= 48 W
P
L(AV)
= 48 W
P
L(AV)
= 48 W
Min
17.5 19
-
35.8 40
-
-
-
-
Typ
Max Unit
-
dB
8.0
5.5 dB
-
61
58
72
68
1.5
2.5
5
8.5
%
dBc
dBc
%
%
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF4G10LS-120,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G10LS-160 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G10LS-160,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G10S-120 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor
BLF4G20-110 制造商:NXP Semiconductors 功能描述:MOSFET Transistor, N-Channel, SOT-502A
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