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參數(shù)資料
| 型號： | BLF4G10LS-120 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 2 PIN |
| 文件頁數(shù)： | 1/13頁 |
| 文件大小： | 100K |
| 代理商： | BLF4G10LS-120 |
1.
Product profile
1.1 General description
120 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
[1]
ACPR
400
at 30 kHz resolution bandwidth
ACPR
600
at 30 kHz resolution bandwidth
[2]
1.2 Features
I
Typical GSM EDGE performance at a frequency of 920 MHz and 960 MHz, a supply
voltage of 28 V and an I
Dq
of 650 mA
N
Load power = 48 W (AV)
N
Gain = 19 dB (typ)
N
Efficiency = 40 % (typ)
N
ACPR
400
=
61 dBc (typ)
N
ACPR
600
=
72 dBc (typ)
N
EVM
rms
= 1.5 % (typ)
I
Easy power control
I
Excellent ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation (800 MHz to 1000 MHz)
I
Internally matched for ease of use
BLF4G10LS-120
UHF power LDMOS transistor
Rev. 01 — 10 January 2006
Product data sheet
Table 1:
f = 920 MHz to 960 MHz; T
h
= 25
°
C; in a class-AB production test circuit; typical values.
Mode of operation
V
DS
(V)
(W)
(dB)
CW
28
120
19
GSM EDGE
28
48 (AV)
19
2-tone
28
120 (PEP)
19
Typical performance
P
L
G
p
η
D
(%)
57
40
46
ACPR
400
(dBc)
-
61
[1]
-
ACPR
600
(dBc)
-
72
[2]
-
EVM
(%)
-
1.5
-
IMD3
(dBc)
-
-
31
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BLF4G10LS-120,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G10LS-160 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G10LS-160,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G10S-120 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor |
| BLF4G20-110 | 制造商:NXP Semiconductors 功能描述:MOSFET Transistor, N-Channel, SOT-502A |
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