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參數(shù)資料
| 型號(hào)： | BLF2022-30 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKGE-2 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 105K |
| 代理商： | BLF2022-30 |
2003 Feb 24
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-30
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Notes
1.
Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
h
= 25
°
C; R
th j-c
= 1.85 K/W; unless otherwise specified.
Ruggedness in class-AB operation
The BLF2022-30 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
DS
= 28 V; I
DQ
= 240 mA; P
L
= 30 W; f = 2170 MHz.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage
gate-source voltage
DC drain current
storage temperature
junction temperature
65
65
±
15
4.5
+150
200
V
V
A
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-h
thermal resistance from junction to heatsink T
h
= 25
°
C; note 1
1.85
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
2
0.3
1.7
MAX.
5.5
5
11
UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
rs
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
V
GS
= 0; I
D
= 0.7 mA
V
DS
= 10 V; I
D
= 70 mA
V
GS
= 0; V
DS
= 28 V
V
GS
= V
GSth
+ 9 V; V
DS
= 10 V
V
GS
=
±
15 V; V
DS
= 0
V
DS
= 10 V; I
D
= 2.5 A
V
GS
= V
GSth
+ 9 V; I
D
= 2.5 A
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
65
4.5
9
V
V
μ
A
A
nA
S
pF
MODE OF OPERATION
f
(MHz)
V
DS
(V)
I
DQ
(mA)
P
L
(W)
G
p
(dB)
η
D
(%)
d
im
(dBc)
≤
25
2-tone, class-AB
f
1
= 2170; f
2
= 2170.1
28
240
30 (PEP)
>11
>30
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