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參數(shù)資料
| 型號： | BLF2022-30 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKGE-2 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 105K |
| 代理商： | BLF2022-30 |
2003 Feb 24
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-30
FEATURES
Typical W-CDMA performance at a supply voltage of
28 V and I
DQ
of 240 mA:
– Output power = 3.5 W (AV)
– Gain = 12.9 dB
– Efficiency = 16.5%
– ACPR =
45 dBc at 3.84 MHz
– d
im
=
42 dBc
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (2000 to 2200 MHz)
Internally matched for ease of use.
APPLICATIONS
RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range.
DESCRIPTION
30 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.
PINNING - SOT608A
PIN
DESCRIPTION
1
2
3
drain
gate
source, connected to flange
Top view
2
1
3
MBL290
Fig.1 Simplified outline (SOT608A).
QUICK REFERENCE DATA
Typical RF performance at T
h
= 25
°
C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
I
DQ
(mA)
P
L
(W)
G
p
(dB)
η
D
(%)
d
im
(dBc)
29.5
ACLR
5
(dBc)
2-tone, class-AB
two-carrier W-CDMA test
model 1, 64 channels
f
1
= 2170; f
2
= 2170.1
28
240
30 (PEP)
12.6
34.3
f
1
= 2155; f
2
= 2165
28
270
3.5 (AV)
12.9
16.5
42
45
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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