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參數(shù)資料
| 型號(hào)： | BGY888 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 通信及網(wǎng)絡(luò) |
| 英文描述： | 860 MHz, 34 dB gain push-pull amplifier |
| 封裝： | BGY888<SOT115J|<<<1<Always Pb-free,; |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 369K |
| 代理商： | BGY888 |
2001 Oct 25
6
NXP Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
BGY888
Table 4
Bandwidth 40 to 600 MHz; V
B
= 24 V; T
case
= 30
C; Z
S
= Z
L
= 75
Notes
1.
f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 541.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 596.5 MHz.
Measured according to DIN45004B:
f
p
= 590.25 MHz; V
p
= V
o
;
f
q
= 597.25 MHz; V
q
= V
o
6 dB;
f
r
= 599.25 MHz; V
r
= V
o
6 dB;
measured at f
p
+ f
q
f
r
= 588.25 MHz.
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
2.
3.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
G
p
power gain
f = 50 MHz
f = 600 MHz
f = 40 to 600 MHz
f = 40 to 600 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 600 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 600 MHz
f = 50MHz
85 channels flat; V
o
= 44 dBmV;
measured at 595.25 MHz
85 channels flat; V
o
= 44 dBmV;
measured at 55.25 MHz
85 channels flat; V
o
= 44 dBmV;
measured at 596.5 MHz
note 1
d
im
=
60 dB; note 2
see Table 1
note 3
33.5
34
0
20
18.5
17
16
20
18.5
17
16
135
34
25
28
28
21
25.5
28.5
26.5
20.5
56.5
34.5
2
0.35
225
55
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
SL
FL
S
11
slope cable equivalent
flatness of frequency response
input return losses
S
22
output return losses
S
21
CTB
phase response
composite triple beat
X
mod
cross modulation
58
54
dB
CSO
composite second order
distortion
second order distortion
output voltage
noise figure (DC)
total current consumption
69.5
56
dB
d
2
V
o
F
I
tot
61
325
68
340
dB
dBmV
dB
mA
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