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參數(shù)資料
| 型號(hào)： | BGY888 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 通信及網(wǎng)絡(luò) |
| 英文描述： | 860 MHz, 34 dB gain push-pull amplifier |
| 封裝： | BGY888<SOT115J|<<<1<Always Pb-free,; |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大?。?/td> | 369K |
| 代理商： | BGY888 |
2001 Oct 25
5
NXP Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
BGY888
Table 3
Bandwidth 40 to 750 MHz; V
B
= 24 V; T
case
= 30
C; Z
S
= Z
L
= 75
Notes
1.
f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 691.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 746.5 MHz.
Measured according to DIN45004B:
f
p
= 740.25 MHz; V
p
= V
o
;
f
q
= 747.25 MHz; V
q
= V
o
6 dB;
f
r
= 749.25 MHz; V
r
o
6 dB;
measured at f
p
+ f
q
f
r
= 738.25 MHz.
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
2.
3.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
G
p
power gain
f = 50 MHz
f = 750 MHz
f = 40 to 750 MHz
f = 40 to 750 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 750 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 750 MHz
f = 50 MHz
110 channels flat; V
o
= 44 dBmV;
measured at 745.25 MHz
110 channels flat; V
o
= 44 dBmV;
measured at 55.25 MHz
110 channels flat; V
o
= 44 dBmV;
measured at 746.5 MHz
note 1
d
im
=
60 dB; note 2
see Table 1
note 3
33.5
34
0.2
20
18.5
17
15.5
14
20
18.5
17
15.5
14
135
34
25
28
28
21
18.5
25.5
28.5
26.5
20.5
21
52.5
34.5
2.2
0.45
225
50
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
SL
FL
S
11
slope cable equivalent
flatness of frequency response
input return losses
S
22
S
21
CTB
phase response
composite triple beat
X
mod
cross modulation
55.5
51
dB
CSO
composite second order
distortion
second order distortion
output voltage
noise figure
total current consumption (DC)
61.5
53
dB
d
2
V
o
F
I
tot
59
325
65
340
dB
dBmV
dB
mA
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