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參數(shù)資料
| 型號(hào)： | BGY888 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 通信及網(wǎng)絡(luò) |
| 英文描述： | 860 MHz, 34 dB gain push-pull amplifier |
| 封裝： | BGY888<SOT115J|<<<1<Always Pb-free,; |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 369K |
| 代理商： | BGY888 |
2001 Oct 25
3
NXP Semiconductors
Product specification
860 MHz, 34 dB gain push-pull amplifier
BGY888
CHARACTERISTICS
Table 1
Bandwidth 40 to 860 MHz; V
B
= 24 V; T
case
= 30
C; Z
S
= Z
L
= 75
Notes
1.
f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 805.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 860.5 MHz.
Measured according to DIN45004B:
f
p
= 851.25 MHz; V
p
= V
o
;
f
q
= 858.25 MHz; V
q
= V
o
6 dB;
f
r
= 860.25 MHz; V
r
= V
o
6 dB;
measured at f
p
+ f
q
f
r
= 849.25 MHz.
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
2.
3.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
G
p
power gain
f = 50 MHz
f = 860 MHz
f = 40 to 860 MHz
f = 40 to 860 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 860 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 860 MHz
f = 50 MHz
49 channels flat; V
o
= 44 dBmV;
measured at 859.25 MHz
49 channels flat; V
o
= 44 dBmV;
measured at 55.25 MHz
49 channels flat; V
o
= 44 dBmV;
measured at 860.5 MHz
note 1
d
im
=
60 dB; note 2
f = 50 MHz
f = 550 MHz
f = 600 MHz
f = 650 MHz
f = 750 MHz
f = 860 MHz
note 3
33.5
34
0.5
20
18.5
17
15.5
14
20
18.5
17
15.5
14
135
34
35
1.1
0.2
25
28
28
21
18.5
25.5
28.5
26.5
20.5
21
63.5
34.5
2.5
0.5
225
60
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
SL
FL
S
11
slope cable equivalent
flatness of frequency response
input return losses
S
22
output return losses
S
21
CTB
phase response
composite triple beat
X
mod
cross modulation
63
59
dB
CSO
composite second order
distortion
second order distortion
output voltage
noise figure
64
55
dB
d
2
V
o
F
58
74
60
4
5.5
325
65
4.5
5
5
5.5
6
7
340
dB
dBmV
dB
dB
dB
dB
dB
dB
mA
I
tot
total current consumption (DC)
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