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參數(shù)資料
| 型號(hào)： | BFR193TW |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor |
| 中文描述： | 硅NPN平面射頻晶體管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 68K |
| 代理商： | BFR193TW |
BFR193T/BFR193TW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
2 (4)
Rev. 2, 14-Feb-00
Document Number
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Collector-emitter cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage I
C
= 1 mA
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
Min
Typ
Max Unit
100
100
1
V
CE
= 20 V, V
EB
= 0
V
CB
= 10 V
V
EB
= 1 V, I
C
= 0
A
nA
A
V
V
12
I
C
= 50 mA, I
B
= 5 mA
V
CE
= 8 V, I
C
= 30 mA
0.1
100
0.5
150
50
Electrical AC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
f
T
C
cb
C
ce
C
eb
Min
6
Typ
8
0.6
0.25
1.6
Max
Unit
GHz
pF
pF
pF
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
V
CE
= 8 V, I
C
= 50 mA, f = 1 GHz
V
CB
= 10 V, f = 1 MHz
V
CE
= 10 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
Z
S
= Z
Sopt
,Z
L
=50 , f = 900 MHz,
V
CE
= 8 V, I
C
= 10 mA
Z
S
= Z
Sopt
,Z
L
=50 , f = 2 GHz,
V
CE
= 8 V, I
C
= 10 mA
Z
S
= Z
Sopt
,Z
L
=50 , f = 900 MHz,
V
CE
= 8 V, I
C
= 30 mA
Z
S
= Z
Sopt
,Z
L
=50 , f = 2 GHz,
V
CE
= 8 V, I
C
= 30 mA
Z
O
=50 , f = 900 MHz,
V
CE
= 8 V, I
C
= 30 mA
Z
O
=50 , f = 2 GHz,
V
CE
= 8 V, I
C
= 30 mA
1.0
Noise figure
F
1.2
dB
2.1
dB
Power gain
G
pe
15
dB
9
dB
Transducer gain
|S
21e2
|
13
dB
7
dB
Third order intercept point
at output
f = 900 MHz, V
CE
= 8 V, I
C
= 50 mA
IP
3
34
dBm
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