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參數(shù)資料
| 型號： | BFR65 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.280 INCH, STUD PACKAGE-4 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 22K |
| 代理商： | BFR65 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 5.0 mA
BV
CER
I
C
= 5.0 mA
BV
CBO
I
C
= 1.0 mA
BV
EBO
I
E
= 1.0 mA
I
CBO
V
CB
= 20 V
V
CE
= 20 V I
C
= 200 mA
I
C
= 400 mA
V
CE(SAT
)
I
C
= 200 mA
C
ob
V
CB
= 20 V
V
CE
= 20 V
V
CE
= 20 V
V
CE
= 20 V
f = 800 MHz
P
o
V
CE
= 20 V
I
C
= 200 mA f = 200 MHz
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
25
UNITS
V
R
BE
= 10
40
V
40
V
3.5
V
100
μ
A
h
FE
30
20
---
I
B
= 20 mA
0.75
V
f = 1.0 MHz
10
pF
f
t
I
C
= 200 mA f = 500 MHz
I
C
= 400 mA f = 500 MHz
I
C
= 200 mA f = 200 MHz
1.2
1.0
15
GHz
G
P
19
4.5
450
dB
mW
NPN SILICON RF POWER TRANSISTOR
BFR65
DESCRIPTION:
The
ASI BRF65
is Designed for
20 V Large-Signal RF Amplifier
Applications.
MAXIMUM RATINGS
I
C
400 mA
1.0 A
(PEAK)
f =
≥
1.0 MHz
25 V
V
CE
V
CB
40 V
P
DISS
5.0 W @ T
mb
= 125
O
C
f =
≥
1.0 MHz
-65
O
C to +200
O
C
-65
O
C to +200
O
C
15
O
C/W
T
J
T
STG
θ
JC
PACKAGE STYLE SOT- 48
ALL DIMENSIONS IN MM
1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE
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