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參數(shù)資料
| 型號(hào)： | BFR193TW |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor |
| 中文描述： | 硅NPN平面射頻晶體管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 68K |
| 代理商： | BFR193TW |
BFR193T/BFR193TW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 2, 14-Feb-00
1 (4)
Document Number
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low–noise, high–gain applications such as power
amplifiers up to 2GHz and for linear broadband
amplifiers.
Features
Low noise figure
High transition frequency f
T
= 8 GHz
Excellent large-signal behaviour
13 581
2
3
1
94 9280
BFR193T Marking: RC
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
2
1
3
13 652
13 570
BFR193TW Marking: WRC
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
20
12
2
80
420
150
Unit
V
V
V
mA
mW
C
C
T
amb
≤
45 C
–65 to +150
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Junction ambient
mounted on glass fibre printed board
(25 x 20 x 1.5) mm
3
plated with 35 m Cu
Symbol
R
thJA
Value
250
Unit
K/W
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