參數(shù)資料
型號(hào): BFG67W
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: NPN 8 GHz wideband transistor
中文描述: C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件頁(yè)數(shù): 4/16頁(yè)
文件大?。?/td> 102K
代理商: BFG67W
August 1995
4
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG67W
BFG67W/X; BFG67W/XR
CHARACTERISTICS
T
j
= 25
°
C (unless otherwise specified).
Note
1.
G
UM
is the maximum unilateral power gain, assuming s
12
is zero.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown
voltage
collector-emitter breakdown
voltage
emitter-base breakdown
voltage
collector cut-off current
DC current gain
transition frequency
open emitter; I
C
= 10
μ
A; I
E
= 0
20
V
V
(BR)CEO
open base; I
C
= 10 mA; I
B
= 0
10
V
V
(BR)EBO
open collector; I
E
= 10
μ
A; I
C
= 0
2.5
V
I
CBO
h
FE
f
T
open emitter; V
CB
= 5 V; I
E
= 0
I
C
= 15 mA; V
CE
= 5 V
I
C
= 15 mA; V
CE
= 8 V; f = 500 MHz;
T
amb
= 25
°
C
I
E
= i
e
= 0; V
CE
= 8 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CE
= 8 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
°
C
I
C
= 15 mA; V
CE
= 8 V; f = 2 GHz;
T
amb
= 25
°
C
Γ
s
= Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
f = 1 GHz
Γ
s
= Γ
opt
; I
C
= 15 mA; V
CE
= 8 V;
f = 1 GHz
Γ
s
= Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
f = 2 GHz
60
100
7.5
50
nA
GHz
C
c
C
e
C
re
G
UM
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power
gain; note 1
0.7
1.3
0.5
15.5
pF
pF
pF
dB
10
dB
F
noise figure
1.3
dB
1.7
dB
2.2
dB
G
UM
10
s
)
1
2
1
s
11
(
s
22
2
(
)
------------------------------------------------------------ dB.
log
=
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