參數(shù)資料
型號: BFG67W
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: NPN 8 GHz wideband transistor
中文描述: C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件頁數(shù): 2/16頁
文件大小: 102K
代理商: BFG67W
August 1995
2
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG67W
BFG67W/X; BFG67W/XR
FEATURES
High power gain
Low noise figure
Gold metallization ensures
excellent reliability.
APPLICATIONS
They are intended for wideband
applications in the GHz range such as
analog satellite television systems
and portable RF communication
equipment.
DESCRIPTION
NPN silicon planar epitaxial
transistors in plastic, 4-pin
dual-emitter SOT343 and SOT343R
packages.
MARKING
PINNING
TYPE NUMBER
CODE
BFG67W
BFG67W/X
BFG67W/XR
V2
V6
V7
PIN
DESCRIPTION
BFG67W
(see Fig.1)
1
2
3
4
collector
base
emitter
emitter
BFG67W/X
(see Fig.1)
1
2
3
4
collector
emitter
base
emitter
BFG67W/XR
(see Fig.2)
1
2
3
4
collector
emitter
base
emitter
Fig.1 SOT343.
fpage
Top view
MBK523
2
1
3
4
Fig.2 SOT343R.
alfpage
Top view
MSB842
2
1
4
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
60
100
0.5
7.5
15.5
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
UM
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
noise figure
open emitter
open base
20
10
50
500
V
V
mA
mW
up to T
s
= 85
°
C
I
C
= 15 mA; V
CE
= 5 V
I
C
= 0; V
CE
= 8 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 8 V; f = 500 MHz; T
amb
= 25
°
C
I
C
= 15 mA; V
CE
= 8 V; f = 1 GHz; T
amb
= 25
°
C
pF
GHz
dB
F
Γ
s
= Γ
opt
; I
C
= 5 mA; V
CE
= 8 V; f = 2 GHz
2.2
dB
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