參數(shù)資料
型號(hào): BFG505
廠(chǎng)商: NXP Semiconductors N.V.
元件分類(lèi): 晶體管
英文描述: NPN 9 GHz wideband transistor
封裝: BFG505<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,;BFG505/X<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47
文件頁(yè)數(shù): 2/13頁(yè)
文件大?。?/td> 306K
代理商: BFG505
NXP
Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability.
APPLICATIONS
RF front end applications in the GHz range, such as
analog and digital cellular telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar detectors, pagers and
satellite TV tuners (SATV).
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.
MARKING
TYPE NUMBER
CODE
BFG505
BFG505/X
%ME
%MK
PINNING
PIN
DESCRIPTION
BFG505
BFG505/X
1
2
3
4
collector
base
emitter
emitter
collector
emitter
base
emitter
Fig.1 Simplified outline SOT143B.
handbook, 2 columns
Top view
MSB014
1
2
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
V
CES
I
C
P
tot
h
FE
C
re
f
T
G
UM
collector-base voltage
collector-emitter voltage R
BE
= 0
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
open emitter
60
120
0.2
9
20
20
15
18
150
250
V
V
mA
mW
T
s
130
°
C
V
CE
= 6 V; I
C
= 5 mA
V
CB
= 6 V; I
C
= i
c
= 0; f = 1 MHz
V
CE
= 6 V; I
C
= 5 mA; f = 1 GHz
V
CE
= 6 V; I
C
= 5 mA;
T
amb
= 25
°
C; f = 900 MHz
V
CE
= 6 V; I
C
= 5 mA;
T
amb
= 25
°
C; f = 2 GHz
V
CE
= 6 V; I
c
= 5 mA;
T
amb
= 25
°
C; f = 900 MHz
Γ
s
=
Γ
opt
; V
CE
= 6 V; I
c
= 1.25 mA;
T
amb
= 25
°
C; f = 900 MHz
Γ
s
=
Γ
opt
; V
CE
= 6 V; I
c
= 5 mA;
T
amb
= 25
°
C; f = 900 MHz
Γ
s
=
Γ
opt
; V
CE
= 6 V; I
c
= 1.25 mA;
T
amb
= 25
°
C; f = 2 GHz
pF
GHz
dB
13
dB
S
21
2
insertion power gain
16
17
dB
F
noise figure
1.2
1.7
dB
1.6
2.1
dB
1.9
dB
Rev. 04 - 22 November 2007
2 of 13
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參數(shù)描述
BFG505 T/R 功能描述:射頻雙極小信號(hào)晶體管 TAPE7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
BFG505,215 功能描述:射頻雙極小信號(hào)晶體管 TAPE7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
BFG505/T1 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR NPN HF
BFG505/X 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:NPN 9 GHz wideband transistors
BFG505/X T/R 功能描述:射頻雙極小信號(hào)晶體管 TAPE7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel