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參數(shù)資料
| 型號： | BFG410 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | NPN 22 GHz wideband transistor |
| 中文描述： | npn型22 GHz的寬帶晶體管 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 104K |
| 代理商： | BFG410 |
1998 Mar 11
9
Philips Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
SPICE parameters for the BFG410W die
SEQUENCE No.
PARAMETER
VALUE
UNIT
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
(1)
20
(1)
21
(1)
22
23
24
25
26
27
28
29
30
31
32
33
34
(1)
35
(1)
36
(1)
37
(1)
38
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
19.42
145.0
0.993
31.12
125.0
123.6
3.000
11.37
0.985
1.874
50.00
199.6
1.546
35.00
0.000
15.00
432.0
4.324
1.500
1.110
3.000
128.0
900.0
0.346
4.122
68.20
2.004
0.627
0.000
56.68
556.9
0.207
0.500
0.000
274.8
418.3
0.239
0.550
aA
V
mA
fA
V
mA
aA
A
m
eV
fF
mV
ps
V
A
deg
fF
mV
ns
fF
mV
Notes
1.
These parameters have not been extracted, the
default values are shown.
Bonding pad capacity C
bp
in series with substrate
resistance R
sb1
between B
′
and E
′
.
Bonding pad capacity C
bp
in series with substrate
resistance R
sb2
between C
′
and E
′
.
2.
3.
List of components
(see Fig.14)
Note
1.
External emitter inductance to be added separately
due to the influence of the printed-circuit board.
39
(2)(3)
40
(2)
41
(3)
C
bp
R
sb1
R
sb2
145
25
19
fF
DESIGNATION
VALUE
UNIT
C
be
C
cb
C
ce
L1
L2
L3 (note 1)
80
2
80
1.1
1.1
0.25
fF
fF
fF
nH
nH
nH
SEQUENCE No.
PARAMETER
VALUE
UNIT
QL
= 50; QL
= 50; QL
(f) = QL
B,E
√
(f/f
c
)
f
c
= scaling frequency = 1 GHz.
Fig.14 Package equivalent circuit SOT343R2.
handbook, halfpage
MGD956
B
E
C
B'
C'
E'
L3
L1
L2
Ccb
Cbe
ce
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFG410W | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 22 GHz wideband transistor |
| BFG410W,115 | 功能描述:射頻雙極小信號晶體管 TAPE-7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFG410W,115-CUT TAPE | 制造商:NXP 功能描述:BFG410W Series 4.5 V 54 mW 22 GHz SMT NPN Wideband Transistor - SOT343R |
| BFG410W,135 | 功能描述:射頻雙極小信號晶體管 Single NPN 4.5V 10mA 54mW 50 22GHz RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFG424F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 25 GHz wideband transistor |
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