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參數(shù)資料
| 型號： | BFG410 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | NPN 22 GHz wideband transistor |
| 中文描述： | npn型22 GHz的寬帶晶體管 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大小： | 104K |
| 代理商： | BFG410 |
1998 Mar 11
4
Philips Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
2.
G
max
is the maximum power gain, if K > 1. If K < 1 then G
max
= MSG; see Figs 6, 7 and 8.
Z
S
is optimized for noise; Z
L
is optimized for gain.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
V
(BR)CEO
collector-base breakdown voltage
collector-emitter breakdown
voltage
emitter-base breakdown voltage
collector-base leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
I
C
= 2.5
μ
A; I
E
= 0
I
C
= 1 mA; I
B
= 0
10
4.5
V
V
V
(BR)EBO
I
CBO
h
FE
C
c
C
e
C
re
I
E
= 2.5
μ
A; I
C
= 0
I
E
= 0; V
CB
= 4.5 V
I
C
= 10 mA; V
CE
= 2 V; see Fig.3
I
E
= i
e
= 0; V
CB
= 2 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CB
= 2 V; f = 1 MHz;
see Fig.4
I
C
= 10 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
°
C; see Fig.5
I
C
= 10 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
°
C; see Figs 7 and 8
I
C
= 10 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
°
C; see Fig.8
I
C
= 1 mA; V
CE
= 2 V;
f = 900 MHz;
Γ
S
=
Γ
opt
; see Fig.13
I
C
= 1 mA; V
CE
= 2 V; f = 2 GHz;
Γ
S
=
Γ
opt
; see Fig.13
I
C
= 10 mA; V
CE
= 2 V; f = 2 GHz;
Z
S
= Z
S opt
; Z
L
= Z
L opt
; note 2
I
C
= 10 mA; V
CE
= 2 V; f = 2 GHz;
Z
S
= Z
S opt
; Z
L
= Z
L opt
; note 2
1
50
80
220
400
45
15
120
V
nA
fF
fF
fF
f
T
transition frequency
22
GHz
G
max
maximum power gain; note 1
21
dB
insertion power gain
18
dB
F
noise figure
0.9
dB
1.2
dB
P
L1
output power at 1 dB gain
compression
third order intercept point
5
dBm
ITO
15
dBm
S
21
2
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