- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384144 > BF996S (Vishay Intertechnology,Inc.) N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode PDF資料下載
參數(shù)資料
| 型號： | BF996S |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| 中文描述： | N.頻道雙柵MOS - Fieldeffect四極管，耗盡型 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 133K |
| 代理商： | BF996S |
BF996S
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
2 (8)
Rev. 3, 20-Jan-99
Document Number 85010
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Drain - source
breakdown voltage
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
Drain current
Test Conditions
Type
Symbol
V
(BR)DS
Min
20
Typ
Max
Unit
V
I
D
= 10 A, –V
G1S
= –V
G2S
= 4 V
±
I
G1S
= 10 mA, V
G2S
= V
DS
= 0
±
V
(BR)G1SS
8
14
V
±
I
G2S
= 10 mA, V
G1S
= V
DS
= 0
±
V
(BR)G2SS
8
14
V
±
V
G1S
= 5 V, V
G2S
= V
DS
= 0
±
I
G1SS
50
nA
±
V
G2S
= 5 V, V
G1S
= V
DS
= 0
±
I
G2SS
50
nA
V
= 15 V, V
= 0, V
= 4 V
DS
G1S
BF996S
BF996SA
BF996SB
I
DSS
I
DSS
I
DSS
4
4
18
10.5
18
2.5
mA
mA
mA
V
G2S
9.5
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
V
DS
= 15 V, V
G2S
= 4 V, I
D
= 20 A
–V
G1S(OFF)
V
DS
= 15 V, V
G1S
= 0, I
D
= 20 A
–V
G2S(OFF)
2.0
V
Electrical AC Characteristics
V
DS
= 15 V, I
D
= 10 mA, V
G2S
= 4 V, f = 1 MHz , T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
y
21s
C
issg1
C
issg2
C
rss
C
oss
G
ps
G
ps
G
ps
F
F
Min
15
Typ
18.5
2.2
1.1
25
10.8
25
18
Max
Unit
mS
pF
pF
fF
pF
dB
dB
dB
dB
dB
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
Feedback capacitance
Output capacitance
Power gain
2.6
V
G1S
= 0, V
G2S
= 4 V
35
1.2
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
G
S
= 3.3 mS, G
L
= 1 mS, f = 800 MHz
V
G2S
= 4 to –2 V, f = 800 MHz
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
G
S
= 3.3 mS, G
L
= 1 mS, f = 800 MHz
AGC range
Noise figure
40
1.0
1.8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BF996SB | N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF996SA | N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998 | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998RBW | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF998R | RES,Metal Glaze,33.2Ohms,200WV,1+/-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF996S T/R | 功能描述:MOSFET TAPE7 MOS-RFSS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BF996S,215 | 功能描述:射頻MOSFET小信號晶體管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF996S,215-CUT TAPE | 制造商:NXP 功能描述:BF996S Series 20 V 30 mA N-channel Dual-gate MOS-FET - SOT143B |
| BF996SA | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF996SB | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。