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參數(shù)資料
| 型號(hào)： | BDV65B |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 10 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 封裝： | PLASTIC, CASE 340D-02, 3 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 105K |
| 代理商： | BDV65B |
3
Motorola Bipolar Power Transistor Device Data
10K
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT (A)
0.1
1
1K
h
4
10
NPN
PNP
VCE = 4 V
IC, COLLECTOR CURRENT (A)
0.1
1
h
10
Figure 3. DC Current Gain
10K
1K
1
10
0.1
IC, COLLECTOR CURRENT (A)
10
0.1
VBE(sat) @ IC/IB = 250
V
Figure 4. “On” Voltages
1
1
10
IC, COLLECTOR CURRENT (A)
0.1
V
1
Figure 5. “On” Voltages
0.1
10
1
VBE(sat) @ IC/IB = 250
Figure 6. Active Region Safe Operating Area
100
1
VCE, COLLECTOR–EMITTER VOLTAGE (V)
50
20
5
10
50
100
SECONDARY BREAKDOWN
LIMITED @ TJ
THERMAL LIMIT @ TC = 25
°
C
BONDING WIRE LIMIT
150
°
C
I
BDV65B, BDV64B
dc
5.0 ms
1.0 ms
100
μ
s
10
1
30
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation
i.e., the transistor must not be subjected to greater dissipa-
The data of Figure 6 is based on TJ(pk) = 150 C, TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150 C. TJ(pk) may be calculated from the data in Fig-
ure 7. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
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參數(shù)描述 |
|---|---|
| BDV65B/D | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Complementary Silicon Plastic Power Darlingtons |
| BDV65B_06 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Complementary Silicon Plastic Power Darlingtons |
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| BDV65BG | 功能描述:達(dá)林頓晶體管 10A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BDV65B-S | 功能描述:達(dá)林頓晶體管 100V 12A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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