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參數(shù)資料
| 型號： | BD646 |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | PNP SILICON POWER DARLINGTONS |
| 中文描述： | 進步黨穎電DARLINGTONS |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 150K |
| 代理商： | BD646 |
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
MAY 1993 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
G
Designed for Complementary Use with
BD645, BD647, BD649 and BD651
G
62.5 W at 25°C Case Temperature
G
8 A Continuous Collector Current
G
Minimum h
FE
of 750 at 3 V, 3 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -5 mA, R
BE
= 100
,
V
BE(off)
= 0, R
S
= 0.1
, V
CC
= -20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BD646
BD648
BD650
BD652
BD646
BD648
BD650
BD652
V
CBO
-80
-100
-120
-140
-60
-80
-100
-120
-5
-8
-12
-0.3
62.5
2
50
V
Collector-emitter voltage (I
B
= 0)
V
CEO
V
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
LI
C
2
T
j
T
stg
T
L
V
A
A
A
W
W
mJ
°C
°C
°C
-65 to +150
-65 to +150
260
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BD648 | PNP SILICON POWER DARLINGTONS |
| BD651 | ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84% |
| BD645 | NPN SILICON POWER DARLINGTONS |
| BD647 | ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84% |
| BD649 | NPN SILICON POWER DARLINGTONS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BD646 | 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR DARLINGTON TO-220 |
| BD646-S | 功能描述:達林頓晶體管 60V 8A PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BD647 | 功能描述:達林頓晶體管 62.5W NPN Silicon RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BD647 | 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR DARLINGTON TO-220 |
| BD647-S | 功能描述:達林頓晶體管 80V 8A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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