- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381577 > BD649 (Power Innovations International, Inc.) NPN SILICON POWER DARLINGTONS PDF資料下載
參數(shù)資料
| 型號(hào)： | BD649 |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | NPN SILICON POWER DARLINGTONS |
| 中文描述： | NPN硅功率DARLINGTONS |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 115K |
| 代理商： | BD649 |
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
MAY 1993 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
G
Designed for Complementary Use with
BD646, BD648, BD650 and BD652
G
62.5 W at 25°C Case Temperature
G
8 A Continuous Collector Current
G
Minimum h
FE
of 750 at 3 V, 3 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 5 mA, R
BE
= 100
,
V
BE(off)
= 0, R
S
= 0.1
, V
CC
= 20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
V
CBO
80
100
120
140
60
80
100
120
5
8
12
0.3
62.5
2
50
V
Collector-emitter voltage (I
B
= 0)
V
CEO
V
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
LI
C
2
T
j
T
stg
T
L
V
A
A
A
W
W
mJ
°C
°C
°C
-65 to +150
-65 to +150
260
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BD745 | NPN SILICON POWER TRANSISTORS |
| BD745A | NPN SILICON POWER TRANSISTORS |
| BD745B | NPN SILICON POWER TRANSISTORS |
| BD745C | NPN SILICON POWER TRANSISTORS |
| BD746 | PNP SILICON POWER TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BD649 | 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR DARLINGTON TO-220 |
| BD649-S | 功能描述:達(dá)林頓晶體管 100V 8A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BD650 | 功能描述:達(dá)林頓晶體管 62.5W PNP Silicon RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BD650 | 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR DARLINGTON TO-220 |
| BD650CS | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。